The UJ3C065030T3S is a high-performance Silicon Carbide (SiC) Cascode JFET device. It combines a normally-on SiC JFET with a Silicon MOSFET to create a normally-off device. This configuration offers low gate charge, low intrinsic capacitance, and excellent reverse recovery characteristics. It is designed for high-efficiency power conversion, featuring a maximum operating temperature of 175°C and ESD protection (HBM Class 2).
| RoHS |
Compliant |
| REACH |
No SVHC |
| Gate Charge (Qg) |
43nC |
| Transistor Polarity |
N-Channel |
| Output Capacitance (Coss) |
320pF |
| Drain-Source Voltage (Vds) |
650V |
| Continuous Drain Current (Id) |
85A |
| Maximum Operating Temperature |
175°C |
| Drain-Source On-Resistance (Rds(on)) |
27mOhm |