UJ3C065030T3S

Производится
UJ3C065030T3S - United Silicon Carbide
Краткое описание: SiC MOSFET Cascode, N-Channel, 650V, 85A, TO-220-3L
Производитель United Silicon Carbide
Категория Без категории
Статус производства Производится (ACTIVE)

Дополнительная информация

The UJ3C065030T3S is a high-performance Silicon Carbide (SiC) Cascode JFET device. It combines a normally-on SiC JFET with a Silicon MOSFET to create a normally-off device. This configuration offers low gate charge, low intrinsic capacitance, and excellent reverse recovery characteristics. It is designed for high-efficiency power conversion, featuring a maximum operating temperature of 175°C and ESD protection (HBM Class 2).
RoHS Compliant
REACH No SVHC
Gate Charge (Qg) 43nC
Transistor Polarity N-Channel
Output Capacitance (Coss) 320pF
Drain-Source Voltage (Vds) 650V
Continuous Drain Current (Id) 85A
Maximum Operating Temperature 175°C
Drain-Source On-Resistance (Rds(on)) 27mOhm