UM5K1NTR
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Краткое описание:
N-Channel JFET, 30V, 100mA ID, 8R RDS(on), SMT
Дополнительная информация
N-Channel Silicon JFET for small signal applications. Features 30V drain-source breakdown voltage and 100mA continuous drain current. Offers a maximum drain-source on-resistance of 8 Ohms at a nominal gate-source voltage of 1.5V. Operates within a temperature range of -55°C to 150°C with 150mW power dissipation. Packaged in a compact UMT5 surface-mount package, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 13pF |
| Power Dissipation | 150mW |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 13R |
| Drain to Source Breakdown Voltage | 30V |
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