UM6J1NTN
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Краткое описание:
P-CH MOSFET, Dual, Si, 30V, 0.2A, 6-Pin UMT SMT
Дополнительная информация
P-Channel Silicon MOSFET, Dual configuration, Enhancement mode, Small Signal. Features 30V Drain-Source Voltage and 0.2A Continuous Drain Current. Surface Mount UMT package (SOT family, MO-223AB) with 6 gull-wing leads, 0.65mm pitch, and compact dimensions (2.1mm L x 1.35mm W x 0.9mm H). Operates from -55°C to 150°C with a maximum power dissipation of 150mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MO-223AB |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | UMT |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.35(Max) |
| Package Family Name | SOT |
| Package Height (mm) | 0.9(Max) |
| Package Length (mm) | 2.1(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 1400@10VmOhm |
| Typical Input Capacitance @ Vds | 30@10VpF |
| Maximum Continuous Drain Current | 0.2A |
