UM6K1NTN
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Краткое описание:
N-Ch JFET, 30V, 100mA ID, 8R Rds(on), SMT
Дополнительная информация
N-Channel Silicon JFET, UMT6 package, 6-pin surface mount device. Features 30V Drain to Source Breakdown Voltage (Vdss) and 100mA Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 8 Ohms and a typical Gate to Source Voltage (Vgs) of 1.5V. Operates across a temperature range of -55°C to 150°C with 150mW power dissipation. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 13pF |
| Power Dissipation | 150mW |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 13R |
| Drain to Source Breakdown Voltage | 30V |
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