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PNP BJT Transistor, 50V VCEO, 100mA IC, 250MHz, SOT-353
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a collector-emitter breakdown voltage of -50V and a maximum collector current of 100mA. Offers a transition frequency of 250MHz and a minimum hFE of 68. Packaged in a compact SOT-353 (SC-88A) surface-mount case with 5 pins, measuring 2.1mm x 1.35mm x 0.9mm. RoHS compliant and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 68 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-353 |
| Current Rating | -30mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector Emitter Breakdown Voltage | -50V |
