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PNP BJT Transistor, 50V VCEO, 100mA IC, 250MHz, SOT-363
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -100mA. This surface mount component, housed in an SC-88 (SOT-363) package, offers a minimum DC current gain (hFE) of 80 and a transition frequency of 250MHz. It operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 150mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 80 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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