UMG3NTR
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NPN BJT Transistor, 50V, 100mA, 250MHz, SC-88A
Дополнительная информация
NPN silicon bipolar junction transistor, ideal for small signal applications. Features a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a low collector-emitter saturation voltage of 150mV and a transition frequency of 250MHz. Packaged in a compact SC-88A surface-mount case, this lead-free and RoHS-compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 100mA |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
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