UMH7N
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Краткое описание:
Dual NPN Pre-Biased Transistor 50V 100mA 150mW UMT6
Дополнительная информация
A general-purpose dual digital transistor that pairs two DTC143T-type NPN pre-biased transistors in a single UMT6 (EIAJ SC-88) surface-mount package. Each element has a built-in 4.7 kΩ input resistor and is rated for a 50 V collector-emitter voltage and a 100 mA collector current. Total collector power dissipation is 150 mW at 25 °C ambient, with a junction temperature range of -55 °C to +150 °C. DC current gain spans 100 to 600 at 1 mA and 5 V, and collector-emitter saturation voltage is 0.3 V maximum at 5 mA.
| RoHS | ROHS3 Compliant |
| REACH | REACH Unaffected |
| Package | UMT6 (SC-88) |
| Marking code | H7 |
| Mounting type | Surface mount |
| Transistor type | 2 NPN pre-biased (dual) |
| Storage temperature | -55 to 150°C |
| Junction temperature | 150°C |
| Input resistance (R1) | 4.7kΩ |
| Collector current (IC) | 100mA |
| Emitter cutoff current | 0.5µA |
| Collector cutoff current | 0.5µA |
| Emitter-base voltage (VEBO) | 5V |
| Collector-base voltage (VCBO) | 50V |
| DC current transfer ratio (hFE) | 100 to 600 |
| Collector power dissipation (PC) | 150mW |
| Collector-emitter voltage (VCEO) | 50V |
| Collector-emitter saturation voltage | 0.3V |
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