UMT2907AT106
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PNP BJT Transistor, 60V, 600mA, 200MHz, SC-70, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor in SC-70 package. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -600mA. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 200MHz. Designed for surface mount applications with a maximum power dissipation of 200mW. RoHS compliant and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 50 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -600mA |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 1.6V |
| Collector Emitter Voltage (VCEO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
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