UMT3904T106
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NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-346
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 200mA. Operates with a maximum power dissipation of 200mW and offers a minimum DC current gain (hFE) of 40. This silicon transistor is housed in a 3-pin SC-70 (SOT-346) surface-mount package, supplied on tape and reel. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 40 |
| Polarity | PNP, NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-346 |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 200mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
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