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RF NPN Transistor, 1.5GHz, 50mA, 20V, SOT-363
Дополнительная информация
NPN RF small signal bipolar transistor featuring a 1.5GHz gain bandwidth product and transition frequency. This surface mount component offers a continuous collector current of 50mA, a collector-emitter voltage (VCEO) of 20V, and a collector base voltage (VCBO) of 30V. With a minimum hFE of 27 and a maximum power dissipation of 150mW, it operates within a temperature range of -55°C to 150°C. The transistor is housed in a 6-pin SOT-363 package, supplied on tape and reel, and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 27 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 18V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 1.5GHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 1.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 3V |
| Continuous Collector Current | 50mA |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
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