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Краткое описание:
RF NPN Transistor, 3.2GHz, 50mA, 11V, SOT-363
Дополнительная информация
NPN RF small signal bipolar transistor featuring a 3.2GHz gain bandwidth product and transition frequency. This surface mount device offers a continuous collector current of 50mA and a collector-emitter breakdown voltage of 11V. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 150mW and a minimum hFE of 56. The component is housed in a 6-pin SOT-363 package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 56 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 11V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 3.2GHz |
| Max Breakdown Voltage | 11V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 3.2GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 3V |
| Continuous Collector Current | 50mA |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 11V |
| Collector Emitter Breakdown Voltage | 11V |
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