UMZ1NT1G
Производится
Увеличить
Краткое описание:
NPN/PNP BJT Transistor, 50V, 200mA, 114MHz, SC-88/SC70-6
Дополнительная информация
Dual NPN/PNP Bipolar Junction Transistor (BJT) in a 6-lead SC-88/SC70-6/SOT-363 package, supplied on a 3000-piece tape and reel. Features a collector-emitter breakdown voltage of 50V, maximum collector current of 200mA, and a transition frequency of 142MHz. Offers a minimum DC current gain (hFE) of 200 and a maximum power dissipation of 385mW. Operates across a temperature range of -55°C to 150°C, with lead-free and RoHS compliance.
| RoHS | Compliant |
| hFE Min | 200 |
| Polarity | PNP, NPN |
| Frequency | 114MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Max Frequency | 114MHz |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 385mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 142MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 250mW |
| Gain Bandwidth Product | 114MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
