UPA1755G

Снят с производства
UPA1755G - Renesas
Краткое описание: N-CH Power MOSFET, 30V, 7A, Dual, 8-Pin SOP
Производитель Renesas
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET, dual dual drain configuration, with a maximum drain-source voltage of 30V and continuous drain current of 7A. Features low on-resistance of 32mΩ at 10V, typical gate charge of 19nC, and input capacitance of 895pF at 10V. Housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting, measuring 5.37mm(Max) x 4.4mm x 1.44mm with a 1.27mm pin pitch. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2000mW.
PCB 8
ECCN EAR99
PPAP No
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code SAN34
Pin Count 8
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOP
AEC Qualified No
Configuration Dual Dual Drain
Pin Pitch (mm) 1.27
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 4.4
Package Description Plastic Small Outline Package
Package Family Name SOP
Package Height (mm) 1.44
Package Length (mm) 5.37(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.8(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 2000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 19nC
Typical Gate Charge @ Vgs 19@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 32@10VmOhm
Typical Input Capacitance @ Vds 895@10VpF
Maximum Continuous Drain Current 7A

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