UPA2731T1A-E1-AZ

Снят с производства
UPA2731T1A-E1-AZ - Renesas
Краткое описание: P-CH MOSFET 30V 44A 6.4mR HVSON
Производитель Renesas
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET transistor for switching applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 44A, with a pulsed drain current capability of 180A. Offers a low on-resistance of 6.4mR and a maximum power dissipation of 4.6W. Operates up to 150°C with a 48mJ avalanche energy rating. Packaged in an 8-pin HVSON with tin terminal finish.
RoHS Compliant
JESD-609 Code e6
Package Shape Rectangular
Package Style SMALL OUTLINEMeter
Surface Mount Yes
Terminal Form Flat
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Compliant Yes
Case Connection DRAIN
Terminal Finish Tin
Terminal Position DUAL
Number of Elements 1
Qualification Status Not Qualified
Reach SVHC Compliant Yes
Package Body Material Plastic
Polarity/Channel Type P-CHANNEL
Drain Current-Max (ID) 44A
Transistor Application SWITCHING
DS Breakdown Voltage-Min 30V
Max Operating Temperature 150°C
Power Dissipation-Max (Abs) 4.6W
Transistor Element Material SILICON
Drain Current-Max (Abs) (ID) 44A
Avalanche Energy Rating (Eas) 48mJ
Drain-source On Resistance-Max 6.4mR
Pulsed Drain Current-Max (IDM) 180A

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