UPA2739T1A-E2-AY
Снят с производства
Краткое описание:
P-CH MOSFET 30V 85A 2.8mR 8-SON
Дополнительная информация
P-channel MOSFET, 30V drain-source breakdown voltage, 85A continuous drain current, and 180A pulsed drain current. Features a low 2.8mΩ maximum drain-source on-resistance and 83W maximum power dissipation. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology, housed in an 8-SON rectangular plastic package with tin terminal finish. Rated for 150°C maximum operating temperature and includes an avalanche energy rating of 160mJ.
| RoHS | Compliant |
| JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Surface Mount | Yes |
| Terminal Form | No Lead |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Case Connection | DRAIN |
| Terminal Finish | Tin |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Package Body Material | Plastic |
| Polarity/Channel Type | P-CHANNEL |
| Drain Current-Max (ID) | 85A |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 30V |
| Max Operating Temperature | 150°C |
| Power Dissipation-Max (Abs) | 83W |
| Transistor Element Material | SILICON |
| Drain Current-Max (Abs) (ID) | 85A |
| Avalanche Energy Rating (Eas) | 160mJ |
| Drain-source On Resistance-Max | 2.8mR |
| Pulsed Drain Current-Max (IDM) | 180A |
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