UPD44165184BF5-E40-EQ3

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UPD44165184BF5-E40-EQ3 - Renesas
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Краткое описание: 1.9V 1M x 18 QDR SRAM 0.45ns LBGA
Производитель Renesas
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

18Mbit QDR SRAM, organized as 1M words by 18 bits, offers a maximum access time of 0.45ns. This CMOS parallel interface memory operates with a nominal supply voltage of 1.8V, ranging from 1.7V to 1.9V. Packaged in a 165-ball low-profile grid array (LBGA) with bottom-mounted ball terminals on a 1mm pitch, it features a rectangular shape with dimensions of 15mm length and 13mm width, and a seated height of 1.46mm. The device supports surface mounting and operates within a commercial temperature range of 0°C to 70°C.
RoHS Not Compliant
Width 13mm
Length 15mm
Density 18874368b
Technology CMOS
Memory Type QDR SRAM
JESD-30 Code R-PBGA-B165
Memory Width 18
Organization 1MX18
Package Code LBGA
Package Shape Rectangular
Package Style GRID ARRAY, LOW PROFILEMeter
Surface Mount Yes
Terminal Form Ball
RoHS Compliant No
Terminal Pitch 1mm
Access Time-Max 0.45ns
Number of Words 1048576
Parallel/Serial PARALLEL
Temperature Grade COMMERCIAL
Terminal Position BOTTOM
Number of Functions 1
Number of Words Code 1M
Height - Seated (Max) 1.46mm
Package Body Material Plastic
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Supply Voltage-Max (Vsup) 1.9V
Supply Voltage-Min (Vsup) 1.7V
Supply Voltage-Nom (Vsup) 1.8V

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