UPD44165364BF5-E40-EQ3
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Краткое описание:
QDR SRAM 512Kx36, 1.8V, 0.45ns, LBGA
Дополнительная информация
High-performance QDR SRAM with 18,874,368 bits density, organized as 512K x 36. Features a maximum access time of 0.45ns and operates from a 1.7V to 1.9V supply voltage. This parallel SRAM is surface mountable, utilizing a low-profile rectangular LBGA package with a 1mm terminal pitch. Designed for commercial temperature ranges (0°C to 70°C), it offers a 1.46mm seated height.
| RoHS | Not Compliant |
| Width | 13mm |
| Length | 15mm |
| Density | 18874368b |
| Technology | CMOS |
| Memory Type | QDR SRAM |
| JESD-30 Code | R-PBGA-B165 |
| Memory Width | 36 |
| Organization | 512KX36 |
| Package Code | LBGA |
| Package Shape | Rectangular |
| Package Style | GRID ARRAY, LOW PROFILEMeter |
| Surface Mount | Yes |
| Terminal Form | Ball |
| RoHS Compliant | No |
| Terminal Pitch | 1mm |
| Access Time-Max | 0.45ns |
| Number of Words | 524288 |
| Parallel/Serial | PARALLEL |
| Temperature Grade | COMMERCIAL |
| Terminal Position | BOTTOM |
| Number of Functions | 1 |
| Number of Words Code | 512K |
| Height - Seated (Max) | 1.46mm |
| Package Body Material | Plastic |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Supply Voltage-Max (Vsup) | 1.9V |
| Supply Voltage-Min (Vsup) | 1.7V |
| Supply Voltage-Nom (Vsup) | 1.8V |