UPD44324365BF5-E40-FQ1-A

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UPD44324365BF5-E40-FQ1-A - Renesas
Краткое описание: DDR SRAM 1M x 36, 0.45ns, 1.8V, 250MHz, BGA
Производитель Renesas
Категория SRAM
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

DDR SRAM chip with 1M x 36 organization, offering 36M-bit density. Features a pipelined architecture and a maximum clock frequency of 250MHz, with a fast access time of 0.45ns. Operates with a 1.8V supply voltage and supports 1.5/1.8V power supplies. This surface-mount component utilizes CMOS technology and comes in a 165-pin BGA package. RoHS compliant and designed for commercial temperature grades.
RoHS Compliant
Width 15mm
Length 17mm
Density 37748736b
I/O Type SEPARATE
Technology CMOS
Memory Type DDR SRAM
JESD-30 Code R-PBGA-B165
Memory Width 36
Organization 1MX36
Package Code LBGA
Package Shape Rectangular
Package Style GRID ARRAY, LOW PROFILEMeter
Surface Mount Yes
Terminal Form Ball
Power Supplies 1.5/1.8,1.8V
RoHS Compliant Yes
Terminal Pitch 1mm
Access Time-Max 0.45ns
Number of Words 1048576
Parallel/Serial PARALLEL
Temperature Grade COMMERCIAL
Terminal Position BOTTOM
Additional Feature PIPELINED ARCHITECTURE
Max Supply Current 540mA
Number of Functions 1
Standby Current-Max 390mA
Standby Voltage-Min 1.7V
Number of Words Code 1M
Qualification Status Not Qualified
Height - Seated (Max) 1.46mm
Package Body Material Plastic
Output Characteristics 3-STATE
Package Equivalence Code BGA165,11X15,40
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Supply Voltage-Max (Vsup) 1.9V
Supply Voltage-Min (Vsup) 1.7V
Supply Voltage-Nom (Vsup) 1.8V
Clock Frequency-Max (fCLK) 250MHz

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