UPD44325094BF5-E40-FQ1

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UPD44325094BF5-E40-FQ1 - Renesas
Краткое описание: QDR SRAM 4M x 9, 250MHz, 0.45ns, 1.8V, LBGA
Производитель Renesas
Категория SRAM
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

High-performance QDR SRAM IC with 36Mbit density, organized as 4Mx9. Features a maximum clock frequency of 250MHz and a maximum access time of 0.45ns. This surface-mount component utilizes CMOS technology and operates with separate I/O. Packaged in a 165-ball low-profile grid array (LBGA) with a 1mm terminal pitch, it supports 1.5/1.8V and 1.8V power supplies.
RoHS Not Compliant
Width 15mm
Length 17mm
Density 37748736b
I/O Type SEPARATE
Technology CMOS
Memory Type QDR SRAM
JESD-30 Code R-PBGA-B165
Memory Width 9
Organization 4MX9
Package Code LBGA
Package Shape Rectangular
Package Style GRID ARRAY, LOW PROFILEMeter
Surface Mount Yes
Terminal Form Ball
Power Supplies 1.5/1.8,1.8V
RoHS Compliant No
Terminal Pitch 1mm
Access Time-Max 0.45ns
Number of Words 4194304
Parallel/Serial PARALLEL
Temperature Grade COMMERCIAL
Terminal Position BOTTOM
Max Supply Current 460mA
Number of Functions 1
Standby Current-Max 370mA
Standby Voltage-Min 1.7V
Number of Words Code 4M
Qualification Status Not Qualified
Height - Seated (Max) 1.46mm
Package Body Material Plastic
Output Characteristics 3-STATE
Package Equivalence Code BGA165,11X15,40
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Supply Voltage-Max (Vsup) 1.9V
Supply Voltage-Min (Vsup) 1.7V
Supply Voltage-Nom (Vsup) 1.8V
Clock Frequency-Max (fCLK) 250MHz