UPD44325094BF5-E40-FQ1-A

Производится
UPD44325094BF5-E40-FQ1-A - Renesas
Краткое описание: QDR SRAM 4M x 9, 250MHz, 0.45ns, 1.8V, LBGA-165
Производитель Renesas
Категория SRAM
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

High-speed QDR SRAM IC with 36Mbit density, organized as 4M words by 9 bits. Features a maximum clock frequency of 250MHz and a maximum access time of 0.45ns. Operates with dual supply voltages of 1.5/1.8V and 1.8V, with a nominal supply voltage of 1.8V. This surface-mount component utilizes CMOS technology and is housed in a 165-ball low-profile grid array package. It offers separate I/O and 3-state output characteristics, with a commercial temperature grade ranging from 0°C to 70°C.
RoHS Compliant
Width 15mm
Length 17mm
Density 37748736b
I/O Type SEPARATE
Technology CMOS
Memory Type QDR SRAM
JESD-30 Code R-PBGA-B165
Memory Width 9
Organization 4MX9
Package Code LBGA
Package Shape Rectangular
Package Style GRID ARRAY, LOW PROFILEMeter
Surface Mount Yes
Terminal Form Ball
Power Supplies 1.5/1.8,1.8V
RoHS Compliant Yes
Terminal Pitch 1mm
Access Time-Max 0.45ns
Number of Words 4194304
Parallel/Serial PARALLEL
Temperature Grade COMMERCIAL
Terminal Position BOTTOM
Max Supply Current 460mA
Number of Functions 1
Standby Current-Max 370mA
Standby Voltage-Min 1.7V
Number of Words Code 4M
Qualification Status Not Qualified
Height - Seated (Max) 1.46mm
Package Body Material Plastic
Output Characteristics 3-STATE
Package Equivalence Code BGA165,11X15,40
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Supply Voltage-Max (Vsup) 1.9V
Supply Voltage-Min (Vsup) 1.7V
Supply Voltage-Nom (Vsup) 1.8V
Clock Frequency-Max (fCLK) 250MHz