UPD44325182BF5-E50-FQ1-A

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UPD44325182BF5-E50-FQ1-A - Renesas
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Краткое описание: QDR SRAM 2Mx18 1.8V 0.45ns 200MHz BGA
Производитель Renesas
Категория SRAM
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Synchronous Dual-Port SRAM memory chip, 36M-bit density organized as 2M words by 18 bits. Features a maximum access time of 0.45ns and a maximum clock frequency of 200MHz. Operates with a nominal supply voltage of 1.8V, with a range of 1.7V to 1.9V. This surface-mount component utilizes a 165-pin BGA package with a 1mm terminal pitch and is RoHS compliant.
RoHS Compliant
Width 15mm
Length 17mm
Density 37748736b
I/O Type SEPARATE
Technology CMOS
Memory Type QDR SRAM
JESD-30 Code R-PBGA-B165
Memory Width 18
Organization 2MX18
Package Code LBGA
Package Shape Rectangular
Package Style GRID ARRAY, LOW PROFILEMeter
Surface Mount Yes
Terminal Form Ball
Power Supplies 1.5/1.8,1.8V
RoHS Compliant Yes
Terminal Pitch 1mm
Access Time-Max 0.45ns
Number of Words 2097152
Parallel/Serial PARALLEL
Temperature Grade COMMERCIAL
Terminal Position BOTTOM
Max Supply Current 530mA
Number of Functions 1
Standby Current-Max 300mA
Standby Voltage-Min 1.7V
Number of Words Code 2M
Qualification Status Not Qualified
Height - Seated (Max) 1.46mm
Package Body Material Plastic
Output Characteristics 3-STATE
Package Equivalence Code BGA165,11X15,40
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Supply Voltage-Max (Vsup) 1.9V
Supply Voltage-Min (Vsup) 1.7V
Supply Voltage-Nom (Vsup) 1.8V
Clock Frequency-Max (fCLK) 200MHz