US5U1TR
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Краткое описание:
N-Channel JFET, 30V, 1.5A ID, 240mR Rds(on), SMD
Дополнительная информация
N-Channel Silicon JFET, Surface Mount, 1.5A Continuous Drain Current, 30V Drain to Source Voltage. Features 240mΩ Drain to Source Resistance, 1W Max Power Dissipation, and 80pF Input Capacitance. Operates with a Gate to Source Voltage of 12V, offering 7ns Turn-On Delay and 9ns Fall Time. Packaged in a compact TUMT5, 5-pin SMD/SMT for tape and reel deployment. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.85mm |
| Length | 2.9mm |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Package/Case | SMD/SMT |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 80pF |
| Power Dissipation | 700mW |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 1W |
| Drain to Source Resistance | 240mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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