US5U29TR
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P-Channel JFET, 20V, 1A ID, 390mR Rds(on), SMD
Дополнительная информация
P-channel JFET for small signal applications, featuring a 20V drain-source breakdown voltage and 1A continuous drain current. This surface-mount device offers a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a 570mΩ drain-to-source resistance and 150pF input capacitance. Packaged in a 5-pin TUMT5 SMD/SMT format, it is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 390mR |
| Package/Case | SMD/SMT |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 150pF |
| Power Dissipation | 700mW |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 570mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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