US6J2TR
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P-Channel JFET, 20V, 1A ID, 390mR Rds(on), SMD
Дополнительная информация
P-channel JFET for small signal applications, featuring a 1A continuous drain current and a 20V drain-source breakdown voltage. Surface mountable in a 6-pin TUMT6 package, this silicon FET offers a maximum drain-source on-resistance of 390mR. Operating across a temperature range of -55°C to 150°C, it boasts a 1W power dissipation and is RoHS compliant. Fast switching characteristics include a 9ns turn-on delay and a 10ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 390mR |
| Package/Case | SMD/SMT |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 150pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 570mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 390MR |
| Drain to Source Breakdown Voltage | -20V |
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