US6K1TR
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Краткое описание:
N-Channel JFET, 30V, 1.5A ID, 240mR Rds(on), SMD
Дополнительная информация
Surface mount N-channel JFET with 30V drain-source breakdown voltage (Vdss) and 1.5A continuous drain current (ID). Features low drain-source on-resistance (Rds On) of 240mΩ, a threshold voltage of 1.5V, and a gate-to-source voltage (Vgs) of 12V. This silicon FET offers a maximum power dissipation of 1W and operates up to 150°C. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 6ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Package/Case | SMD/SMT |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Input Capacitance | 80pF |
| Power Dissipation | 1W |
| Threshold Voltage | 1.5V |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Drain to Source Resistance | 240mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 340MR |
| Drain to Source Breakdown Voltage | 30V |
