US6K4TR
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Краткое описание:
2 N-Channel JFET, 1.5A, 20V, 130mR, 10V, 110pF, -55°C to 150°C
Дополнительная информация
The US6K4TR is a 2 N-Channel JFET from Rohm with a continuous drain current of 1.5A and a drain to source breakdown voltage of 20V. It features a drain to source resistance of 130mR and a gate to source voltage of 10V. The device has an input capacitance of 110pF and operates over a temperature range of -55°C to 150°C. The US6K4TR is packaged in a SMD/SMT package and is lead free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 180mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Input Capacitance | 110pF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 130mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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