US6M1TR
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Краткое описание:
N/P-Channel JFET, 1A ID, 30V Vdss, 280mR Rds(on), SMD
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount (SMD/SMT) device with a 30V Drain to Source Voltage (Vdss). Features a continuous drain current (ID) of 1A and a maximum power dissipation of 1W. Offers a drain-source on-resistance (Rds On Max) of 240mR and a gate-to-source voltage (Vgs) of -12V. Operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 0.77mm |
| Length | 2mm |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 1.4A |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 70pF |
| Power Dissipation | 1W |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | -12V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 280MR |
| Drain to Source Breakdown Voltage | -20V |
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