US6M2TR
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Краткое описание:
N/P-Channel JFET, 1A ID, 30V Vdss, 240mR Rds(on), SMD
Дополнительная информация
Surface mount N-channel and P-channel JFET with 30V drain-source voltage (Vdss) and 1.5A continuous drain current (ID). Features 240mΩ drain-source on-resistance (Rds On Max) and 1.5V nominal gate-source voltage (Vgs). Operates from -55°C to 150°C with 1W power dissipation. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 240mR |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 80pF |
| Power Dissipation | 1W |
| Threshold Voltage | 1.5V |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 240mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 340MR |
| Drain to Source Breakdown Voltage | -20V |
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