UT6W93-AE-0125
Краткое описание:
Through Hole NPN Phototransistor, 1 Channel, 30V, 0.4V Saturation, -25 to 85°C
Дополнительная информация
This is a through hole mounted NPN phototransistor with a single channel and a maximum collector-emitter voltage of 30V. It has a maximum collector-emitter saturation voltage of 0.4V and operates within a temperature range of -25 to 85°C. The phototransistor is fabricated using NPN transistor technology and has a domed lens shape. It can handle a maximum light current of 0.0004A and a maximum dark current of 100μA.
| PCB | 2 |
| ECCN | EAR99 |
| Type | Chip |
| Mounting | Through Hole |
| Polarity | NPN |
| Pin Count | 2 |
| Pin Pitch (mm) | 2.54 |
| Lens Shape Type | Domed |
| Basic Package Type | Through Hole |
| Package Width (mm) | 2.31 |
| Package Height (mm) | 5.72 |
| Package Length (mm) | 4.45 |
| Radiation Hardening | No |
| Viewing Orientation | Side View |
| Maximum Dark Current | 100nA |
| Phototransistor Type | Phototransistor |
| Maximum Light Current | 0.0004uA |
| Fabrication Technology | NPN Transistor |
| Seated Plane Height (mm) | 5.72 |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Number of Channels per Chip | 1 |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Saturation Voltage | 0.4V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
