V55C2256164VBLN10
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Краткое описание:
256M Mobile SDRAM 16Mx16 16-Bit Die
Дополнительная информация
This unpackaged, fully tested integrated circuit chip is a 256M mobile SDRAM with a 16Mx16 organization and 16-bit data bus width. It operates at a maximum clock rate of 100 and has four internal banks with 4M words per bank. The maximum access time is 22.8 nanoseconds, and the maximum operating current is 70 milliamps. The device is rated for operation between 0 and 70 degrees Celsius.
| ECCN | EAR99 |
| Type | Mobile SDRAM |
| Density | 256Mbit |
| EU RoHS | Yes |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| Organization | 16Mx16 |
| Package/Case | Die |
| RoHS Versions | 2002/95/EC |
| Data Bus Width | 16bit |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Clock Rate | 100MHz |
| Maximum Access Time | 22|8|7ns |
| Package Description | An Unpackaged, Fully Tested Integrated Circuit Chip |
| Package Family Name | Die |
| Radiation Hardening | No |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Max Operating Temperature | 70°C |
| Maximum Operating Current | 70mA |
| Min Operating Temperature | 0°C |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Typical Operating Supply Voltage | 2.5V |
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