The V55C2256164VBUB10I is a 256M Mobile SDRAM with a 16Mx16 organization and 16-bit data bus width. It operates at a maximum clock rate of 100MHz and has 4 internal banks with 4M words per bank. The device has a maximum access time of 22|8|7 and a density of 268435456 bits. It is designed for surface mount applications and has a typical operating supply voltage of 2.5V. The device can operate at temperatures between -40°C and 85°C.
| ECCN |
EAR99 |
| Type |
Mobile SDRAM |
| Density |
256Mbit |
| EU RoHS |
No |
| HTS Code |
8542320024 |
| Mounting |
Surface Mount |
| Lead Shape |
Ball |
| Schedule B |
8542320015 |
| Organization |
16Mx16 |
| Package/Case |
BGA |
| RoHS Versions |
2011/65/EU, 2015/863 |
| Data Bus Width |
16bit |
| Density in Bits |
268435456bit |
| Package Material |
Plastic |
| Address Bus Width |
15bit |
| Basic Package Type |
Ball Grid Array |
| Maximum Clock Rate |
100MHz |
| Maximum Access Time |
22|8|7ns |
| Package Description |
Plastic Ball Grid Array |
| Package Family Name |
BGA |
| Radiation Hardening |
No |
| Number of Internal Banks |
4 |
| Number of Words per Bank |
4M |
| Max Operating Temperature |
85°C |
| Maximum Operating Current |
70mA |
| Min Operating Temperature |
-40°C |
| Max Operating Supply Voltage |
2.9V |
| Min Operating Supply Voltage |
2.3V |
| Typical Operating Supply Voltage |
2.5V |