V55C2256164VBUB8IPC

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V55C2256164VBUB8IPC - Promos Technologies
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Краткое описание: 256M Mobile SDRAM 16Mx16 16-Bit 4-Bank 2.3-2.9V -40-85°C BGA
Производитель Promos Technologies
Категория DRAM
Статус производства Производится (ACTIVE)

Дополнительная информация

This 256M Mobile SDRAM features a 16Mx16 organization and 16-bit data bus width. It has four internal banks with 4M words per bank and a maximum access time of 19.6 nanoseconds. The device operates at a maximum clock rate of 125 MHz and has a maximum operating current of 90 mA. It is supplied with a typical voltage of 2.5V and can operate within a temperature range of -40°C to 85°C.
ECCN EAR99
Type Mobile SDRAM
Density 256Mbit
EU RoHS No
HTS Code 8542320024
Mounting Surface Mount
Lead Shape Ball
Schedule B 8542320015
Organization 16Mx16
Package/Case BGA
RoHS Versions 2011/65/EU, 2015/863
Data Bus Width 16bit
Density in Bits 268435456bit
Package Material Plastic
Address Bus Width 15bit
Basic Package Type Ball Grid Array
Maximum Clock Rate 125MHz
Maximum Access Time 19|6|6ns
Package Description Plastic Ball Grid Array
Package Family Name BGA
Radiation Hardening No
Number of Internal Banks 4
Number of Words per Bank 4M
Max Operating Temperature 85°C
Maximum Operating Current 90mA
Min Operating Temperature -40°C
Max Operating Supply Voltage 2.9V
Min Operating Supply Voltage 2.3V
Typical Operating Supply Voltage 2.5V

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