V55C2256164VBUD10E
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Краткое описание:
256M Mobile SDRAM Die
Дополнительная информация
The 256M Mobile SDRAM is an unpackaged, fully tested integrated circuit chip with a density of 256M. It features a 16Mx16 organization and a 16-bit data bus width. The device operates at a maximum clock rate of 100 and has 4 internal banks with 4M words per bank. The maximum access time is 22.8 nanoseconds, and the maximum operating current is 70mA. The device is suitable for operating temperatures between -40°C and 125°C, with a typical operating supply voltage of 2.5V and a maximum operating supply voltage of 2.9V.
| ECCN | EAR99 |
| Type | Mobile SDRAM |
| Density | 256Mbit |
| EU RoHS | No |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| Organization | 16Mx16 |
| Package/Case | Die |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Data Bus Width | 16bit |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Clock Rate | 100MHz |
| Maximum Access Time | 22|8|7ns |
| Package Description | An Unpackaged, Fully Tested Integrated Circuit Chip |
| Package Family Name | Die |
| Radiation Hardening | No |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Max Operating Temperature | 125°C |
| Maximum Operating Current | 70mA |
| Min Operating Temperature | -40°C |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Typical Operating Supply Voltage | 2.5V |
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