V55C2256164VBUD8I

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V55C2256164VBUD8I - Promos Technologies
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Краткое описание: 256M Mobile SDRAM 16Mx16 4-Bank 4M Words Die
Производитель Promos Technologies
Категория DRAM
Статус производства Производится (ACTIVE)

Дополнительная информация

This unpackaged, fully tested integrated circuit chip is a 256M mobile SDRAM with a 16Mx16 organization and 4 internal banks. Each bank contains 4M words, and the device operates at a maximum clock rate of 125. The maximum operating current is 90mA, and the typical operating supply voltage is 2.5V. The device is rated to operate over a temperature range of -40°C to 85°C.
ECCN EAR99
Type Mobile SDRAM
Density 256Mbit
EU RoHS No
HTS Code 8542320024
Schedule B 8542320015
Organization 16Mx16
Package/Case Die
RoHS Versions 2011/65/EU, 2015/863
Data Bus Width 16bit
Density in Bits 268435456bit
Address Bus Width 15bit
Maximum Clock Rate 125MHz
Maximum Access Time 19|6|6ns
Package Description An Unpackaged, Fully Tested Integrated Circuit Chip
Package Family Name Die
Radiation Hardening No
Number of Internal Banks 4
Number of Words per Bank 4M
Max Operating Temperature 85°C
Maximum Operating Current 90mA
Min Operating Temperature -40°C
Max Operating Supply Voltage 2.9V
Min Operating Supply Voltage 2.3V
Typical Operating Supply Voltage 2.5V

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