V55C2256164VBUH10E

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V55C2256164VBUH10E - Promos Technologies
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Краткое описание: 256Mbit Mobile SDRAM, 16Mx16, 4-Bank, 100MHz, BGA Package
Производитель Promos Technologies
Статус производства Производится (ACTIVE)

Дополнительная информация

This 256Mbit mobile SDRAM features a 16Mx16 organization and 4 banks with 4M words per bank. It operates at a maximum clock rate of 100MHz and has a maximum access time of 22ns, 8ns, and 7ns. The device is packaged in a plastic ball grid array and is designed for surface mount applications. It operates within a temperature range of -40°C to 125°C and has a typical operating supply voltage of 2.5V, a maximum operating supply voltage of 2.9V, and a minimum operating supply voltage of 2.3V.
ECCN EAR99
Type Mobile SDRAM
Density 256Mbit
EU RoHS Yes
HTS Code 8542320024
Mounting Surface Mount
Lead Shape Ball
Schedule B 8542320015
Organization 16Mx16
Package/Case BGA
RoHS Versions 2002/95/EC
Data Bus Width 16bit
Density in Bits 268435456bit
Package Material Plastic
Address Bus Width 15bit
Basic Package Type Ball Grid Array
Maximum Clock Rate 100MHz
Maximum Access Time 22|8|7ns
Package Description Plastic Ball Grid Array
Package Family Name BGA
Radiation Hardening No
Number of Internal Banks 4
Number of Words per Bank 4M
Max Operating Temperature 125°C
Maximum Operating Current 70mA
Min Operating Temperature -40°C
Max Operating Supply Voltage 2.9V
Min Operating Supply Voltage 2.3V
Typical Operating Supply Voltage 2.5V

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