V55C2256164VBUR8E
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Краткое описание:
256M Mobile SDRAM 16Mx16 4-Bank 4MxW Die
Дополнительная информация
The V55C2256164VBUR8E is a 256M Mobile SDRAM with 16Mx16 organization, 4 internal banks, and 4M words per bank. It operates at a maximum clock rate of 125 and has a maximum access time of 19.6ns. The device is designed to function within a temperature range of -40°C to 125°C and can handle a maximum operating current of 90mA. It requires a typical operating supply voltage of 2.5V and can tolerate a maximum operating supply voltage of 2.9V and a minimum operating supply voltage of 2.3V.
| ECCN | EAR99 |
| Type | Mobile SDRAM |
| Density | 256Mbit |
| EU RoHS | Yes |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| Organization | 16Mx16 |
| Package/Case | Die |
| RoHS Versions | 2002/95/EC |
| Data Bus Width | 16bit |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Clock Rate | 125MHz |
| Maximum Access Time | 19|6|6ns |
| Package Description | An Unpackaged, Fully Tested Integrated Circuit Chip |
| Package Family Name | Die |
| Radiation Hardening | No |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Max Operating Temperature | 125°C |
| Maximum Operating Current | 90mA |
| Min Operating Temperature | -40°C |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Typical Operating Supply Voltage | 2.5V |
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