VEMT2000X01
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NPN Phototransistor, 20V, 50mA, 860nm, SMD, Top View
Дополнительная информация
NPN phototransistor for surface mount applications, featuring an 860nm silicon chip with a domed, black lens and a 30° viewing angle. This component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 50mA, with a power dissipation of 100mW. Designed for automotive environments and AEC-Q101 qualified, it operates between -40°C and 100°C and is supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.3mm |
| Height | 2.77mm |
| Length | 2.3mm |
| Series | Automotive, AEC-Q101 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Lens Color | Black |
| Lens Style | Domed |
| Wavelength | 860nm |
| Orientation | Top View |
| Package/Case | SMD/SMT |
| Viewing Angle | 30° |
| RoHS Compliant | Yes |
| Package Quantity | 6000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 400mV |
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