VEMT2020X01
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NPN Phototransistor, 860nm, 20V, 50mA, SMD, Automotive
Дополнительная информация
Automotive-grade NPN phototransistor for surface mount applications, featuring a 20V collector-emitter breakdown voltage and 50mA maximum collector current. This silicon phototransistor operates at an 860nm wavelength with a 15° viewing angle, housed in a 2.3mm x 2.77mm SMD package with a domed black lens. Designed for a wide temperature range of -40°C to 100°C, it offers 100mW maximum power dissipation and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.3mm |
| Height | 2.77mm |
| Length | 2.3mm |
| Series | Automotive, AEC-Q101 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Lens Color | Black |
| Lens Style | Domed |
| Wavelength | 860nm |
| Orientation | Top View |
| Package/Case | SMD/SMT |
| Viewing Angle | 15° |
| RoHS Compliant | Yes |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 400mV |
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