VEMT2500X01
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Краткое описание:
NPN Phototransistor 850nm 20V 50mA SMD
Дополнительная информация
Automotive-grade NPN phototransistor chip for surface mount applications. Features a 20V collector-emitter breakdown voltage and 50mA maximum collector current. Operates across a -40°C to 100°C temperature range with 100mW power dissipation. This 850nm silicon component has a domed, transparent lens and is supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101 |
| Polarity | NPN |
| Packaging | Tape and Reel |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | SMD/SMT |
| Viewing Angle | 30° |
| RoHS Compliant | Yes |
| Package Quantity | 6000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 400mV |
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