VEMT3700-GS08
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NPN Phototransistor, 850nm IR, 70V VCEO, 100mA, PLCC, SMT
Дополнительная информация
NPN silicon phototransistor for optical sensing applications. Features a 70V collector-emitter voltage, 50mA max collector current, and 100mW power dissipation. Emitting infrared light at 830nm with a 120° viewing angle. Packaged in a 2-pin PLCC surface-mount case, this component operates from -40°C to 100°C and is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.8mm |
| Height | 1.65mm |
| Length | 3mm |
| Polarity | NPN |
| Fall Time | 6000ns |
| Packaging | Tape and Reel |
| Lens Style | Flat |
| Wavelength | 830nm |
| Orientation | Top View |
| Package/Case | PLCC |
| Viewing Angle | 120° |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
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