VMM85-02F
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Краткое описание:
Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Дополнительная информация
Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| RoHS | Compliant |
| Mount | Chassis Mount |
| Series | HiPerFET™ |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 100ns |
| Packaging | Bulk |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Package Quantity | 6 |
| Input Capacitance | 15nF |
| Power Dissipation | 370W |
| Turn-Off Delay Time | 200ns |
| Max Power Dissipation | 370W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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