VMMK-1218-TR1G
Снят с производства
Увеличить
Краткое описание:
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3
Дополнительная информация
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3
| Gain | 9dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Frequency | 10GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Technology | GAAS |
| Noise Figure | 0.81dB |
| Package/Case | 0402 |
| Test Voltage | 3V |
| RoHS Compliant | Yes |
| Voltage Rating | 5V |
| Package Quantity | 5000 |
| Operating Frequency | 10 GHz |
| Radiation Hardening | No |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Gate to Source Voltage (Vgs) | 1V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 5V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
