VMO580-02F
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Краткое описание:
580A 200V N-Ch MOSFET Power Module 3.8mR
Дополнительная информация
N-Channel Power MOSFET Module featuring 200V drain-to-source breakdown voltage and 580A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low Rds On of 3.8mR. Designed for chassis mounting, it operates within a temperature range of -40°C to 150°C. Key switching parameters include a 500ns fall time and 900ns turn-off delay time, with a maximum gate-to-source voltage of 20V. This RoHS compliant, lead-free component is supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Chassis Mount |
| Series | HiPerFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 500ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 3.8mR |
| Package/Case | Module |
| Current Rating | 580A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2 |
| Turn-Off Delay Time | 900ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 580A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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