VN10LPSTOA
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Краткое описание:
N-Channel JFET, 60V, 270mA, TO-92, Through Hole/SMD
Дополнительная информация
N-Channel JFET with 60V Drain-Source Breakdown Voltage and 270mA Continuous Drain Current. Features 7.5Ω Drain-Source Resistance, 625mW Power Dissipation, and 60pF Input Capacitance. Designed for through-hole and surface mount applications, this silicon FET is housed in a TO-92 compatible E-Line package. Operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Package/Case | TO-92-3 |
| Current Rating | 270mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 60pF |
| Power Dissipation | 625mW |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 270mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
