VN2106N3-G

Производится
VN2106N3-G - Microchip
Увеличить
Краткое описание: N-CH JFET, 60V, 300mA, 4R, TO-92, Through Hole
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel JFET, TO-92 package, offering 300mA continuous drain current and 60V drain-to-source breakdown voltage. Features 4Ω drain-to-source resistance, 50pF input capacitance, and fast switching times with turn-on delay of 3ns and fall time of 5ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. Designed for through-hole mounting.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 5ns
Packaging Bulk
Rds On Max 4R
Package/Case TO-92-3
Package Quantity 1000
Input Capacitance 50pF
Power Dissipation 1W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 3ns
Radiation Hardening No
Turn-Off Delay Time 6ns
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 4R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 300mA
Drain to Source Breakdown Voltage 60V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.