VN2110K1-G

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VN2110K1-G - Microchip
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Краткое описание: 200mA 100V N-CH JFET SOT-23-3 Surface Mount
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel, small-signal MOSFET in a SOT-23-3 package. Features 200mA continuous drain current, 100V drain-to-source breakdown voltage, and 4Ω drain-to-source resistance. Operates with a gate-to-source voltage up to 20V, offering fast switching with turn-on delay of 3ns and fall time of 5ns. Maximum power dissipation is 360mW, with an operating temperature range of -55°C to 150°C. Surface mountable and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Height 1.12mm
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 5ns
Packaging Tape and Reel
Rds On Max 4R
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 50pF
Power Dissipation 360mW
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 3ns
Radiation Hardening No
Turn-Off Delay Time 6ns
Max Power Dissipation 360mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 4R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Drain to Source Breakdown Voltage 100V

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