VN2210N3-G

Производится
VN2210N3-G - Microchip
Увеличить
Краткое описание: 100V 1.2A N-CH JFET TO-92 Through Hole
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel small signal MOSFET in a TO-92-3 package, designed for through-hole mounting. Features a 100V drain-to-source breakdown voltage and a continuous drain current of 1.2A. Offers a low drain-to-source resistance of 4R and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 10ns turn-on delay and 30ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 30ns
Packaging Bulk
Rds On Max 350mR
Package/Case TO-92-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 500pF
Power Dissipation 1W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 50ns
Max Power Dissipation 740mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 4R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.2A
Drain to Source Breakdown Voltage 100V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.