VND5N07-1

Снят с производства
VND5N07-1 - Stmicroelectronics
Увеличить
Краткое описание: N-Channel Power MOSFET, 70V, 5A, TO-251-3, Through Hole
Производитель Stmicroelectronics
Категория Гонщики
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The VND5N07-1 is a 70V N-Channel Power MOSFET with a continuous drain current of 5A. It features a drain to source breakdown voltage of 70V and a drain to source resistance of 200mΩ. The device operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 60W. It is available in a TO-251-3 package and is suitable for through hole mounting.
RoHS Not CompliantNo
Mount Through Hole
Series OMNIFET II™
Polarity N-CHANNEL
Packaging Rail/Tube
Package/Case TO-251-3
Output Current 5A
RoHS Compliant No
Supply Current 250uA
Package Quantity 75
Number of Outputs 1
Power Dissipation 60W
Max Output Current 5A
On-State Resistance 200mR
Radiation Hardening No
Max Power Dissipation 60W
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Drain to Source Resistance 200mR
Continuous Drain Current (ID) 5A
Drain to Source Breakdown Voltage 70V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.