VNP10N06-E
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Краткое описание:
N-CHANNEL MOSFET, 60V, 10A, TO-220, Through Hole
Дополнительная информация
The VNP10N06-E is a TO-220 packaged N-CHANNEL MOSFET with a maximum drain to source breakdown voltage of 60V and a continuous drain current of 10A. It features a maximum power dissipation of 42W and an on-state resistance of 150mR. The device is designed for low-side output configuration and is suitable for applications requiring high current handling. It is lead free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | OMNIFET™, VIPower™ |
| Polarity | N-CHANNEL |
| Interface | On/Off |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Output Current | 6A |
| RoHS Compliant | Yes |
| Supply Current | 150uA |
| Fault Protection | Over Voltage, Over Temperature |
| Package Quantity | 50 |
| Number of Outputs | 1 |
| Power Dissipation | 42W |
| Max Output Current | 6A |
| On-State Resistance | 150mR |
| Radiation Hardening | No |
| Output Configuration | Low Side |
| Max Power Dissipation | 42W |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 60V |
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